planar die construction 200mw power dissipation zener voltages from 2.4v - 39v ultra-small surface mount package power dissipation maximum ratings @t a =25 unless otherwise specified characteristic symbol value unit forward voltage (note 2) @ i f = 10ma v f 0.9 v power dissipation(note 1) p d 200 mw thermal resistance, junction to ambient air r ja 625 / w operating and storage temperature range t j ,t stg -65 to +150 bzx84c series zener diode features ? ? ? ? dimensions in inches and (millimeters) SOT-323 http://www.luguang.cn mail:lge@luguang.cn
type number marking code zener voltage range (note 2) maximum zener impedance (note 3) maximum reverse current temperature coefficient of zener voltage @i zt = 5ma (mv/c) v z @i zt i zt z zt @i zt z zk @i zk i zk i r @v r nom (v) min (v) max (v) ma ma ua v min max bzx84c2v4w krb 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0 bzx84c2v7w krc 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0 bzx84c3v0w krd 3.0 2.8 3.2 5.0 95 600 1.0 20 1.0 -3.5 0 bzx84c3v3w kre 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0 bzx84c3v6w krf 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0 bzx84c3v9w krg 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0 bzx84c4v3w krh 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0 bzx84c4v7w kr1 4.7 4.4 5.0 5.0 80 600 1.0 3.0 2.0 -3.5 0.2 bzx84c5v1w kr2 5.1 4.8 5.4 5.0 60 500 1.0 2.0 2.0 -2.7 1.2 bzx84c5v6w kr3 5.6 5.2 6.0 5.0 40 480 1.0 1.0 2.0 -2.0 2.5 bzx84c6v2w kr4 6.2 5.8 6.6 5.0 10 400 1.0 3.0 4.0 0.4 3.7 bzx84c6v8w kr5 6.8 6.4 7.2 5.0 15 150 1.0 2.0 4.0 1.2 4.5 bzx84c7v5w kr6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3 bzx84c8v2w kr7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.2 bzx84c9v1w kr8 9.1 8.5 9.6 5.0 15 80 1.0 0.5 6.0 3.8 7.0 bzx84c10w kr9 10 9.4 10.6 5.0 20 100 1.0 0.2 7.0 4.5 8.0 bzx84c11w kp1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0 bzx84c12w kp2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0 bzx84c13w kp3 13 12.4 14.1 5.0 30 150 1.0 0.1 8.0 7.0 11.0 bzx84c15w kp4 15 13.8 15.6 5.0 30 170 1.0 0.1 10.5 9.2 13.0 bzx84c16w kp5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0 bzx84c18w kp6 18 16.8 19.1 5.0 45 200 1.0 0.1 12.6 12.4 16.0 bzx84c20w kp7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0 bzx84c22w kp8 22 20.8 23.3 5.0 55 225 1.0 0.1 15.4 16.4 20.0 bzx84c24w kp9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 22.0 bzx84c27w kpa 27 25.1 28.9 2.0 80 250 0.5 0.1 18.9 21.4 25.3 bzx84c30w kpb 30.0 28.0 32.0 2.0 80 300 0.5 0.1 21.0 24.4 29.4 bzx84c33w kpc 33.0 31.0 35.0 2.0 80 300 0.5 0.1 23.1 27.4 33.4 bzx84c36w kpd 36.0 34.0 38.0 2.0 90 325 0.5 0.1 25.2 30.4 37.4 bzx84c39w kpe 39.0 37.0 41.0 2.0 130 350 0.5 0.1 27.3 33.4 41.2 electrical characteristics @ t a = 25c unless otherwise specified notes: 1. valid provided that device terminals are kept at ambient temperature. 2. tested with pulses, 300 s pulse width, 2% duty cycle. 3. f = 1khz. bzx84c series zener diode http://www.luguang.cn mail:lge@luguang.cn
0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener current (ma) z v , zener voltage (v) fig. 2 zener breakdown characteristics z t = 25c j c2v7 c3v3 c3v9 c4v7 c5v6 c6v8 c8v2 test current i 5.0ma z 400 t , ambient temperature, c fi g . 1. power deratin g curve a p , power dissipation (mw) d see note 1 200 100 300 0 5 00 0 100 200 0 10 20 30 0 i , zener current (ma) z v , zener voltage (v) fi g . 3, zener breakdown characteristics z 10 20 30 40 t = 25c j test current i 5ma z test current i 2ma z c10 c12 c18 c22 c27 c33 c36 c15 typical characteristics bzx84c series zener diode http://www.luguang.cn mail:lge@luguang.cn
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